INTERVALENCE BAND ABSORPTION IN STRAINED AND UNSTRAINED INGAAS MULTIPLE QUANTUM-WELL STRUCTURES

被引：69

作者：

FUCHS, G

HORER, J

HANGLEITER, A

HARLE, V

SCHOLZ, F

GLEW, RW

GOLDSTEIN, L

机构：

[1] BNR EUROPE,HARLOW,ESSEX,ENGLAND

[2] ALCATEL ALSTHOM RECH,MARCOUSSIS,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.106973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the direct determination of absorption losses in unstrained InGaAs/InGaAsP and InGaAs/InGaAlAs and strained InGaAs/InGaAsP layer multiple quantum well (MQW) laser structures. In the case of the unstrained structures we find a strong dependence of the absorption on carrier density indicating the presence of an intrinsic optical loss mechanism, the intervalence band absorption (IVBA). In the strained layer InGaAs/InGaAsP structures, IVBA is completely switched off. Our results explain the superiority of strained layer InGaAs MQW lasers.

引用

页码：231 / 233

页数：3

共 18 条

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