AUGER RECOMBINATION IN DIRECT-GAP SEMICONDUCTORS - BAND-STRUCTURE EFFECTS

被引：158

作者：

HAUG, A ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 21期

关键词：

D O I：

10.1088/0022-3719/16/21/017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4159 / 4172

页数：14

共 21 条

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[7] INFLUENCE OF SCREENING EFFECTS ON AUGER RECOMBINATION IN SEMICONDUCTORS
HAUG, A
EKARDT, W
[J]. SOLID STATE COMMUNICATIONS, 1975, 17 (03) : 267 - 268
[8] HAUG A, 1978, SOLID STATE COMMUN, V28, P291, DOI 10.1016/0038-1098(78)90646-4
[9] CALCULATION OF AUGER COEFFICIENTS FOR III-V SEMICONDUCTORS WITH EMPHASIS ON GASB
HAUG, A
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02): : 357 - 365
[10] AUGER RECOMBINATION IN INGAASP
HAUG, A
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 512 - 514