AUGER RECOMBINATION IN INGAASP

被引：40

作者：

HAUG, A ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 06期

关键词：

D O I：

10.1063/1.93986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：512 / 514

页数：3

共 13 条

[1]

[Anonymous], 1966, SEMICONDUCTORS SEMIM

[2] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[3] THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J].

DUTTA, NK ;

NELSON, RJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :74-92

[4]

HAUG A, 1978, SOLID STATE COMMUN, V28, P291, DOI 10.1016/0038-1098(78)90646-4

[5] CALCULATION OF AUGER COEFFICIENTS FOR III-V SEMICONDUCTORS WITH EMPHASIS ON GASB [J].

HAUG, A ;

KERKHOFF, D ;

LOCHMANN, W .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02) :357-365

[6]

HEINEN J, 1982, J APPL PHYS, V53, P1800, DOI 10.1063/1.330680

[7]

Iwanenko D. D., 1953, KLASSISCHE FELDTHEOR

[8] SCATTERING MECHANISMS IN PHONON-ASSISTED AUGER RECOMBINATION [J].

LOCHMANN, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (01) :181-185

[9] PHONON-ASSISTED AUGER RECOMBINATION IN SEMICONDUCTORS [J].

LOCHMANN, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (01) :285-292

[10] EVIDENCE FOR AUGER AND FREE-CARRIER LOSSES IN GAINASP-INP LASERS - SPECTROSCOPY OF A SHORT WAVELENGTH EMISSION [J].

MOZER, A ;

ROMANEK, KM ;

SCHMID, W ;

PILKUHN, MH ;

SCHLOSSER, E .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :964-966

← 1 2 →