CALCULATION OF AUGER COEFFICIENTS FOR III-V SEMICONDUCTORS WITH EMPHASIS ON GASB

被引：62

作者：

HAUG, A

KERKHOFF, D

LOCHMANN, W

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1978年 / 89卷 / 02期

关键词：

D O I：

10.1002/pssb.2220890204

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：357 / 365

页数：9

共 9 条

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[3] AUGER RECOMBINATION IN GAAS AN GASB
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[4] INFLUENCE OF SCREENING EFFECTS ON AUGER RECOMBINATION IN SEMICONDUCTORS
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EKARDT, W
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[5] Haug A., 1972, THEORETICAL SOLID ST, V2
[6] AUGER RECOMBINATION IN GERMANIUM
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[7] PHONON-ASSISTED AUGER RECOMBINATION IN SEMICONDUCTORS
LOCHMANN, W
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (01): : 285 - 292
[8] Ryzhik IM., 1965, SERIES AND PRODUCTS
[9] AUGER RECOMBINATION IN INAS, GASB, INP, AND GAAS
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