THRESHOLD VOLTAGE AND GAIN TERM BETA OF ION-IMPLANTED ENHANCEMENT-MODE N-CHANNEL MOS-TRANSISTORS

[1] INFLUENCE OF NON-UNIFORMLY DOPED SUBSTRATES ON MOS C-V CURVES [J]. SOLID-STATE ELECTRONICS, 1970, 13 (12) : 1591 - +

[2] COMPLEMENTARY MOS 1.2 VOLT WATCH CIRCUIT USING ION IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 165 - &

[3] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, P41

[4] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, P46

[5] DILL HG, 1971, 2 P INT C ION IMPL S, P315

[6] EDWARDS JR, 1971, 1971 INT EL DEV M WA

[7] Grove A S, 1967, PHYS TECHNOL S, P157

[8] JADDAM AY, 1971 INT EL DEV M WA

[9] MACPHERSON MR, 1971, APPL PHYS LETT, V18, P502, DOI 10.1063/1.1653513

[10] NISHIMATSU S, 1970, 2 P C SOL STAT DEV, P29

[1] INFLUENCE OF NON-UNIFORMLY DOPED SUBSTRATES ON MOS C-V CURVES [J]. SOLID-STATE ELECTRONICS, 1970, 13 (12) : 1591 - +

[2] COMPLEMENTARY MOS 1.2 VOLT WATCH CIRCUIT USING ION IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 165 - &

[3] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, P41

[4] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, P46

[5] DILL HG, 1971, 2 P INT C ION IMPL S, P315

[6] EDWARDS JR, 1971, 1971 INT EL DEV M WA

[7] Grove A S, 1967, PHYS TECHNOL S, P157

[8] JADDAM AY, 1971 INT EL DEV M WA

[9] MACPHERSON MR, 1971, APPL PHYS LETT, V18, P502, DOI 10.1063/1.1653513

[10] NISHIMATSU S, 1970, 2 P C SOL STAT DEV, P29