ANALYSIS OF TUNGSTEN-OXIDE FILMS USING MEV ION-BEAMS

被引：16

作者：

WAGNER, W ^{[1
]}

RAUCH, F ^{[1
]}

OTTERMANN, C ^{[1
]}

BANGE, K ^{[1
]}

机构：

[1] SCHOTT GLASWERKE,W-6500 MAINZ,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 68卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)96089-H

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Tungsten oxide films produced by reactive evaporation were analyzed using the N-15 technique for H profiling, RBS with He-4 ions and ERD with Ar-40 ions. The film stoichiometry was determined as WO3.0H0.3 + aH2O, where the second term describes the uptake of water molecules during storage after film production. It was found that the stoichiometry of the films is not influenced by ion irradiation over a large range of ion doses and that the coloration of the films induced by ion irradiation is not connected with changes of the H content.

引用

页码：262 / 265

页数：4

共 7 条

[1] INFLUENCE OF SUBSTOICHIOMETRY, HYDROGEN CONTENT AND CRYSTALLINITY ON OPTICAL AND ELECTRICAL-PROPERTIES OF HXWOY THIN-FILMS [J].