REDUCTIVE CORROSION OF ITO IN CONTACT WITH AL IN ALKALINE-SOLUTIONS

被引:24
作者
VANDENMEERAKKER, JEAM
TERVEEN, WR
机构
[1] Philips Research Laboratories
关键词
D O I
10.1149/1.2069228
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Tin-doped indium oxide (ITO) layers show severe corrosion in alkaline solutions when they are in electrical contact with Al. This corrosion process is investigated by etching experiments, electrochemical measurements, and analytical techniques. It is shown that Al maintains ITO at a cathodic potential where it is reduced. Al itself is oxidized and dissolves as AlO2-. The products of the ITO corrosion are most probably SnO3(2-), which dissolves in the solution, and In metal, which forms grains at the surface. This causes a gray opaque appearance and a disconnection between the ITO and Al. When there is no longer electrical contact, the Al dissolution proceeds but the ITO attack is found to stop.
引用
收藏
页码:385 / 390
页数:6
相关论文
共 15 条
[1]  
[Anonymous], 1963, ATLAS EQUILIBRES ELE
[2]   ELECTROCHEMICAL AND SURFACE CHARACTERISTICS OF TIN OXIDE AND INDIUM OXIDE ELECTRODES [J].
ARMSTRONG, NR ;
LIN, AWC ;
FUJIHIRA, M ;
KUWANA, T .
ANALYTICAL CHEMISTRY, 1976, 48 (04) :741-750
[3]   MICROTUNNELLING DURING LOCALIZED ATTACK OF PASSIVE ALUMINUM - THE CASE OF SALT FILMS VS OXIDE-FILMS [J].
BAUMGARTNER, M ;
KAESCHE, H .
CORROSION SCIENCE, 1989, 29 (2-3) :363-378
[4]   ETCHING METHODS FOR INDIUM OXIDE-TIN OXIDE-FILMS [J].
BRADSHAW, G ;
HUGHES, AJ .
THIN SOLID FILMS, 1976, 33 (02) :L5-L8
[5]   HETEROJUNCTION PHOTOELECTRODES .3. CYCLIC VOLTAMMETRY AT INDIUM TIN OXIDE-COATED SILICON AQUEOUS REDOX ELECTROLYTE INTERFACES [J].
CHYAN, OMR ;
HO, SI ;
RAJESHWAR, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) :531-536
[6]   HETEROJUNCTION PHOTOELECTRODES .2. ELECTROCHEMISTRY AT TIN-DOPED INDIUM OXIDE AQUEOUS-ELECTROLYTE INTERFACES [J].
CHYAN, OMR ;
RAJESHWAR, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) :2109-2115
[7]   ITO AS COUNTERELECTRODE IN A POLYMER BASED ELECTROCHROMIC DEVICE [J].
CORRADINI, A ;
MARINANGELI, AM ;
MASTRAGOSTINO, M .
ELECTROCHIMICA ACTA, 1990, 35 (11-12) :1757-1760
[8]   ELECTROOPTICAL PROPERTIES OF THIN INDIUM TIN OXIDE-FILMS - LIMITATIONS ON PERFORMANCE [J].
DHERE, RG ;
GESSERT, TA ;
SCHILLING, LL ;
NELSON, AJ ;
JONES, KM ;
AHARONI, H ;
COUTTS, TJ .
SOLAR CELLS, 1987, 21 :281-290
[9]   REPORT ON WORKSHOP GROUP DELIBERATIONS AND DISCUSSIONS [J].
ENGELL, HJ ;
ORIANI, RA .
CORROSION SCIENCE, 1989, 29 (2-3) :119-127
[10]   PROPERTIES OF SN-DOPED IN2O3 FILMS PREPARED BY RF SPUTTERING [J].
FAN, JCC ;
BACHNER, FJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1719-1725