PINNING PROPERTIES OF A DISORDERED PLANAR DEFECT

被引：2

作者：

AGASSI, D

BARDO, RD

机构：

[1] Naval Surface Weapons Center, Dahlgren Division, Silver Spring, MD 20903-5000, White Oak Detachment

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1993年 / 210卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(93)90015-I

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of penetration depth fluctuations in a disordered-regular superconducting junction are evaluated in the London limit. This configuration demonstrates a disorder-proximity effect: the disorder on the one side of the junction induces pinning potential fluctuations on the other side which penetrate a distance of the order of the penetration depth into the regular side. The associated correlation functions and critical currents are calculated and discussed.

引用

页码：114 / 126

页数：13

共 28 条

[21]

LUKES T, 1969, SOLID STATE THEORY, pCH13

[22] BOSON LOCALIZATION AND PINNING BY CORRELATED DISORDER IN HIGH-TEMPERATURE SUPERCONDUCTORS [J].