ELEMENTAL COMPOSITION AND MICROSTRUCTURE OF REACTIVELY SPUTTERED CARBON NITRIDE THIN-FILMS

被引：59

作者：

KUMAR, S

TANSLEY, TL

机构：

[1] Semiconductor Science and Technology Laboratories, Physics Department, Macquarie University, Sydney

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.357329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of carbon nitride have been grown on various substrates using low power radio frequency reactive sputtering of graphite in pure nitrogen plasma. A quantitative composition analysis using Rutherford backscattering spectrometry shows that the film contains about 51 at. % C, 44 at. % N, and 5 at. % O. The study of the microstructure of the films using cross-sectional scanning electron microscopy reveals highly oriented columnar structures.

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页码：4390 / 4392

页数：3

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