LOW-TEMPERATURE SYNTHESIS OF ALUMINUM NITRIDE FILM BY HCD-TYPE ION PLATING

Aluminium nitride (AlN) thin films were deposited on glass substrates, using aluminium and nitrogen as source materials, by hollow cathode discharge (HCD)-type ion plating. The films were evaluated using X-ray diffraction, scanning electron microscopy, infrared transmission spectroscopy and Auger electron spectroscopy, and their densities were measured. The phase of the deposits changed from Al to Al + AlN and to AlN with an increase in nitrogen flow rate. The structure of the AlN films varied from a dense structure to columnar structure with a rise in nitrogen flow rate. The film with the dense structure had a density near the theoretical value. Oxygen caused by the attack of H2O in air was detected only on the surface of films with the dense structure, but throughout the inside of the films with the columnar structure.