EPITAXIAL-GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE USING METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：114

作者：

MORITA, M

UESUGI, N

ISOGAI, S

TSUBOUCHI, K

MIKOSHIBA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 01期

关键词：

D O I：

10.1143/JJAP.20.17

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：17 / 23

页数：7

共 15 条

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