GROWTH, CRYSTALLOGRAPHIC AND ELECTRICAL ASSESSMENT OF EPITAXIAL LAYERS OF ALUMINUM NITRIDE ON CORUNDUM SUBSTRATES

被引：44

作者：

CALLAGHAN, MP ^{[1
]}

PATTERSON, E ^{[1
]}

RICHARDS, BP ^{[1
]}

WALLACE, CA ^{[1
]}

机构：

[1] GE CO LTD, HIRST RES CTR, WEMBLEY HA9 7PP, ENGLAND

来源：

关键词：

D O I：

10.1016/0022-0248(74)90125-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：85 / 98

页数：14

共 28 条

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