EPITAXIAL GROWTH OF ALUMINUM NITRIDE

被引：64

作者：

CHU, TL

ING, DW

NOREIKA, AJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 10期

关键词：

D O I：

10.1016/0038-1101(67)90152-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1023 / &

相关论文

共 10 条

[1] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION
ANTELL, GR
EFFER, D
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 509 - 511
[2] EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE
CAMPBELL, RB
CHU, TL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 825 - &
[3] CHANG HC, AF336153624
[4] SPACE CHARGE CONDUCTION AND ELECTRICAL BEHAVIOUR OF ALUMINIUM NITRIDE SINGLE CRYSTALS
Edwards, J.
Kawabe, K.
Stevens, G.
Tredgold, R. H.
[J]. SOLID STATE COMMUNICATIONS, 1965, 3 (05) : 99 - 100
[5] PREPARATION OF CRYSTALS OF PURE HEXAGONAL SIC
HAMILTON, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 735 - 739
[6] VAPORIZATION BEHAVIOR OF BORON NITRIDE AND ALUMINUM NITRIDE
HILDENBRAND, DL
HALL, WF
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1963, 67 (04) : 888 - &
[7] LAGRENAUDIE J, 1956, J CHIM PHYS PCB, V53, P222
[8] REFRACTION INDEX MEASUREMENTS ON AIN SINGLE CRYSTALS
PASTRNAK, J
ROSKOVCOVA, L
[J]. PHYSICA STATUS SOLIDI, 1966, 14 (01): : K5 - +
[9] HERSTELLUNG DER NITRIDE VON BOR, ALUMINIUM, GALLIUM UND INDIUM NACH DEM AUFWACHSVERFAHREN
RENNER, T
[J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1959, 298 (1-2): : 22 - 33
[10] SOME PROPERTIES OF ALUMINUM NITRIDE
TAYLOR, KM
LENIE, C
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (04) : 308 - 314