EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE

被引：38

作者：

CAMPBELL, RB

CHU, TL

机构：

来源：

关键词：

D O I：

10.1149/1.2424128

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：825 / &

共 13 条

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CAMPBELL, RB .

[6]

Faust J. W., 1960, SILICON CARBIDE HIGH, P403

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