PLASMA-ASSISTED REACTIVE EVAPORATION OF ALUMINUM NITRIDE FILMS

[1] PROCESSES OF THE ACTIVATED REACTIVE EVAPORATION TYPE AND THEIR TRIBOLOGICAL APPLICATIONS [J]. THIN SOLID FILMS, 1983, 107 (01) : 21 - 38

[2] GOETZBERGER A, 1973, ADV SOLID STATE PHYS, V8, P13

[3] QUANTITATIVE ION-BEAM PROCESS FOR THE DEPOSITION OF COMPOUND THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 547 - 549

[4] ITOH A, 1974, JAPAN J APPL PHYS S2, V45, P467

[5] AUGER ANALYSIS OF PLASMA-GROWN GAAS OXIDE-FILMS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01): : K11 - K14

[6] KINETICS AND MECHANISM OF PLASMA NITRIDATION OF THIN ALUMINUM FILMS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02): : 479 - 485

[7] VACUUM DEPOSITION OF AIN ACOUSTIC TRANSDUCERS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (08) : 286 - &

[1] PROCESSES OF THE ACTIVATED REACTIVE EVAPORATION TYPE AND THEIR TRIBOLOGICAL APPLICATIONS [J]. THIN SOLID FILMS, 1983, 107 (01) : 21 - 38

[2] GOETZBERGER A, 1973, ADV SOLID STATE PHYS, V8, P13

[3] QUANTITATIVE ION-BEAM PROCESS FOR THE DEPOSITION OF COMPOUND THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 547 - 549

[4] ITOH A, 1974, JAPAN J APPL PHYS S2, V45, P467

[5] AUGER ANALYSIS OF PLASMA-GROWN GAAS OXIDE-FILMS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01): : K11 - K14

[6] KINETICS AND MECHANISM OF PLASMA NITRIDATION OF THIN ALUMINUM FILMS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02): : 479 - 485

[7] VACUUM DEPOSITION OF AIN ACOUSTIC TRANSDUCERS [J]. APPLIED PHYSICS LETTERS, 1968, 13 (08) : 286 - &