KINETICS AND MECHANISM OF PLASMA NITRIDATION OF THIN ALUMINUM FILMS

被引：13

作者：

JUNG, T

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 93卷 / 02期

关键词：

D O I：

10.1002/pssa.2210930210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：479 / 485

页数：7

共 13 条

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JUNG, T ;

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[4] PLASMA NITRIDING AND ION PLATING WITH AN INTENSIFIED GLOW-DISCHARGE [J].

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SIRVIO, EH ;

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THIN SOLID FILMS, 1983, 107 (04) :387-394

[5] KINETICS AND MECHANISM OF MAGNESIUM NITRIDATION IN A DC DISCHARGE [J].

LASKA, L ;

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[6] FORMATION OF AL-NITRIDE FILMS AT ROOM-TEMPERATURE BY NITROGEN ION-IMPLANTATION INTO ALUMINUM [J].

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HEZEL, R .

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[7]

MIYAGAWA Y, 1981, REP GOVT IND RES I N, V30, P125

[8] ELECTRONIC CONDUCTION IN EPITAXIAL ALUMINUM NITRIDE FILMS ON SILICON [J].

MORITA, M ;

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[9]

NEMETZ JA, 1983, SOLID STATE TECHNOL, V26, P79

[10]

NEMETZ JA, 1983, SOLID STATE TECHNOL, V26, P209

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