ELECTRONIC CONDUCTION IN EPITAXIAL ALUMINUM NITRIDE FILMS ON SILICON

被引：14

作者：

MORITA, M

TSUBOUCHI, K

MIKOSHIBA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 05期

关键词：

D O I：

10.1143/JJAP.21.728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：728 / 730

页数：3

共 14 条

[1] ON PREPARATION OPTICAL PROPERTIES AND ELECTRICAL BEHAVIOUR OF ALUMINIUM NITRIDE [J].

COX, GA ;

CUMMINS, DO ;

KAWABE, K ;

TREDGOLD, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (04) :543-&

[2]

Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163

[3] SPACE CHARGE CONDUCTION AND ELECTRICAL BEHAVIOUR OF ALUMINIUM NITRIDE SINGLE CRYSTALS [J].

Edwards, J. ;

Kawabe, K. ;

Stevens, G. ;

Tredgold, R. H. .

SOLID STATE COMMUNICATIONS, 1965, 3 (05) :99-100

[4]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[5] POOLE-FRENKEL CONSTANT [J].

HILL, RM .

THIN SOLID FILMS, 1971, 8 (03) :R21-&

[6]

MASASEVIT HM, 1971, J ELECTROCHEM SOC, V118, P1864

[7] ALUMINUM NITRIDE EPITAXIALLY GROWN ON SILICON - ORIENTATION RELATIONSHIPS [J].

MORITA, M ;

ISOGAI, S ;

SHIMIZU, N ;

TSUBOUCHI, K ;

MIKOSHIBA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :L173-L175

[8] CHARACTERISTICS OF THE METAL-INSULATOR SEMICONDUCTOR STRUCTURE - AIN-SI [J].

MORITA, M ;

ISOGAI, S ;

TSUBOUCHI, K ;

MIKOSHIBA, N .

APPLIED PHYSICS LETTERS, 1981, 38 (01) :50-52

[9] EPITAXIAL-GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE USING METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MORITA, M ;

UESUGI, N ;

ISOGAI, S ;

TSUBOUCHI, K ;

MIKOSHIBA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :17-23

[10] CURRENT-VOLTAGE CHARACTERISTICS OF DIELECTRIC FILMS [J].

ODWYER, JJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :599-&

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