ALUMINUM NITRIDE EPITAXIALLY GROWN ON SILICON - ORIENTATION RELATIONSHIPS

被引：61

作者：

MORITA, M

ISOGAI, S

SHIMIZU, N

TSUBOUCHI, K

MIKOSHIBA, N

机构：

来源：

关键词：

D O I：

10.1143/JJAP.20.L173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L173 / L175

页数：3

共 8 条

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[3] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM
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[4] EPITAXIAL-GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE USING METALORGANIC CHEMICAL VAPOR-DEPOSITION
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ISOGAI, S
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[5] GROWTH AND PROPERTIES OF SILICON FILMS ON ALUMINUM-NITRIDE FILMS ON SAPPHIRE
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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1580 - 1582
[6] EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 292 - 296
[7] REACTIVE MOLECULAR-BEAM EPITAXY OF ALUMINUM NITRIDE
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GONDA, S
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 990 - 993
[8] YOSHIDA S, 1977, 7TH P INT VAC C VIEN, P1797