PLASMA-ENHANCED THERMAL NITRIDATION OF SILICON

[1] HIGH-FIELD DARK CURRENTS IN THIN CVD SILICON-NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 495 - 502

[2] FLUORINE-ENHANCED PLASMA GROWTH OF NATIVE LAYERS ON SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 999 - 1002

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 330 - 331

[5] ITO T, 1978, J ELECTROCHEM SOC, V125, P449

[6] ITO T, UNPUBLISHED

[7] ITO T, 1980, ISSCC, P74

[8] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 996 - 1003

[1] HIGH-FIELD DARK CURRENTS IN THIN CVD SILICON-NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 495 - 502

[2] FLUORINE-ENHANCED PLASMA GROWTH OF NATIVE LAYERS ON SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 999 - 1002

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 330 - 331

[5] ITO T, 1978, J ELECTROCHEM SOC, V125, P449

[6] ITO T, UNPUBLISHED

[7] ITO T, 1980, ISSCC, P74

[8] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 996 - 1003