HIGH-FIELD DARK CURRENTS IN THIN CVD SILICON-NITRIDE

被引：20

作者：

ANDREWS, JM

JACKSON, BG

POLITO, WJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.327350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：495 / 502

页数：8

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共 21 条

[1]

Abeles F., 1963, PROGRESS OPTICS, V2, P249

[2] HIGH-FIELD DARK CURRENTS IN THIN CVD SILICON-NITRIDE WITH GRADED INTERFACIAL COMPOSITION [J].

ANDREWS, JM ;

JACKSON, BG ;

POLITO, WJ .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :785-787

[3] HOLE INJECTION INTO SILICON-NITRIDE - DARK CURRENT DEPENDENCE ON ELECTRODE MATERIALS AND INSULATOR THICKNESS [J].

ARNETT, PC ;

DIMARIA, DJ .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :34-36

[4] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].

ARNETT, PC ;

YUN, BH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96

[5] REVIEW OF RECENT EXPERIMENTS PERTAINING TO HOLE TRANSPORT IN SI3N4 [J].

ARNETT, PC ;

WEINBERG, ZA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :1014-1018

[6] NONVOLATILE SEMICONDUCTOR MEMORY DEVICES [J].

CHANG, JJ .

PROCEEDINGS OF THE IEEE, 1976, 64 (07) :1039-1059

[7] CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS [J].

DIMARIA, DJ ;

ARNETT, PC .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) :227-244

[8] HOLE INJECTION INTO SILICON-NITRIDE - INTERFACE BARRIER ENERGIES BY INTERNAL PHOTOEMISSION [J].

DIMARIA, DJ ;

ARNETT, PC .

APPLIED PHYSICS LETTERS, 1975, 26 (12) :711-713

[9] Electron emission in intense electric fields [J].

Fowler, RH ;

Nordheim, L .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) :173-181

[10]

KUSHNER RA, UNPUBLISHED