FLUORINE-ENHANCED PLASMA GROWTH OF NATIVE LAYERS ON SILICON

[1] CHANG RK, UNPUBLISHED

[2] PLASMA OXIDATION OF GAAS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 56 - 58

[3] MULTIPURPOSE PLASMA REACTOR FOR MATERIALS RESEARCH AND PROCESSING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 278 - 280

[4] CHANG RPH, 1980, S THIN FILM INTERFAC

[5] COMPARATIVE STUDY OF PLASMA ANODIZATION OF SILICON IN A COLUMN OF A DC GLOW DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1971, 19 (06) : 199 - &

[6] KINETICS AND OXIDE PROPERTIES OF SILICON OXIDATION IN O2-H2-HCL MIXTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2249 - 2254

[7] KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1595 - 1601

[8] HO VQ, 1979, 3RD P INT C SOL STAT

[9] THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 330 - 331

[10] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 448 - 452

[1] CHANG RK, UNPUBLISHED

[2] PLASMA OXIDATION OF GAAS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 56 - 58

[3] MULTIPURPOSE PLASMA REACTOR FOR MATERIALS RESEARCH AND PROCESSING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 278 - 280

[4] CHANG RPH, 1980, S THIN FILM INTERFAC

[5] COMPARATIVE STUDY OF PLASMA ANODIZATION OF SILICON IN A COLUMN OF A DC GLOW DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1971, 19 (06) : 199 - &

[6] KINETICS AND OXIDE PROPERTIES OF SILICON OXIDATION IN O2-H2-HCL MIXTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2249 - 2254

[7] KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1595 - 1601

[8] HO VQ, 1979, 3RD P INT C SOL STAT

[9] THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 330 - 331

[10] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 448 - 452