KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON

被引：82

作者：

HIRABAYA.K ^{[1
]}

IWAMURA, J ^{[1
]}

机构：

[1] TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 11期

关键词：

D O I：

10.1149/1.2403311

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1595 / 1601

页数：7

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