SEPARATION OF LINEAR AND PARABOLIC TERMS IN STEAM OXIDATION OF SILICON

被引：75

作者：

PLISKIN, WA

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1966年 / 10卷 / 03期

关键词：

D O I：

10.1147/rd.103.0198

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

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页码：198 / &

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共 34 条

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES
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[2] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION
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[3] ATALLA MM, 1963, METALLURGICAL SOCIET, V5, P163
[4] BALK P, 1965, T METAL SOC AIME, V233, P533
[5] THE OXIDATION OF SILICON AT HIGH TEMPERATURES
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[6] BURKHARDT PJ, TO BE PUBLISHED
[7] AN INVESTIGATION OF THE OPTICAL PROPERTIES AND THE GROWTH OF OXIDE FILMS ON SILICON
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 983 - 987
[8] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
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GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[9] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533
[10] THERMAL OXIDATION OF HEAVILY DOPED SILICON
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SKLAR, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) : 430 - +

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