EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON

[1] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[2] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 280 - +

[3] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[4] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[5] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[6] HOFSTEIN SR, 1967, IEEE T ELECTRON DEVI, VED14, P749

[7] KERR DR, 1966, MAY EL SOC M CLEV

[8] KRIEGLER RJ, 1970, NOV LOC M ONT QUEB S

[9] IONIC CONTAMINATION AND TRANSPORT OF MOBILE IONS IN MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 966 - +

[10] MACKENNA E, 1970, OCT EL SOC M ATL CIT

[1] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[2] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 280 - +

[3] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[4] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[5] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[6] HOFSTEIN SR, 1967, IEEE T ELECTRON DEVI, VED14, P749

[7] KERR DR, 1966, MAY EL SOC M CLEV

[8] KRIEGLER RJ, 1970, NOV LOC M ONT QUEB S

[9] IONIC CONTAMINATION AND TRANSPORT OF MOBILE IONS IN MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 966 - +

[10] MACKENNA E, 1970, OCT EL SOC M ATL CIT