VACUUM DEPOSITION OF AIN ACOUSTIC TRANSDUCERS

被引：76

作者：

WAUK, MT

WINSLOW, DK

机构：

[1] Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1968年 / 13卷 / 08期

关键词：

D O I：

10.1063/1.1652613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin-film microwave acoustic transducers of piezoelectric aluminum nitride (AlN) have been vacuum deposited by two methods. Aluminum nitride was deposited on metallic film substrates at 300°-1200°C by evaporating aluminum in the presence of either nitrogen gas dissociated in an ac discharge or in the presence of ammonia gas. Longitudinal ultrasonic waves were generated in a sapphire rod with a one-way-tuned conversion loss of 10 dB at 1700 MHz. © 1968 The American Institute of Physics.

引用

页码：286 / &

共 9 条

[1]

ANDREEVA TV, 1964, SOV PHYSHIGH TEMP, V2, P742

[2] EPITAXIAL GROWTH OF ALUMINUM NITRIDE [J].