REVERSE-BIASED PHOTOCONDUCTIVE DETECTORS AND SWITCHES WITH SEPARATE ABSORPTION AND DETECTION AREA

被引：13

作者：

RIEL, P ^{[1
]}

GREGER, E ^{[1
]}

REINGRUBER, K ^{[1
]}

ENNES, M ^{[1
]}

KIESEL, P ^{[1
]}

KNEISSL, M ^{[1
]}

DOHLER, GH ^{[1
]}

TRANKLE, G ^{[1
]}

WEIMANN, G ^{[1
]}

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,MUNICH,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.113203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on reverse biased photoconductive detectors with novel design and improved high-frequency performance. Taking advantage of the]] giant ambipolar diffusion constant" which has been observed previously in n-i-p-i doping superlattices very fast carrier transfer from the inner absorption area to the outer detection area is achieved. The combination of narrow contact spacings and small RC and diffusion time constants results in very high gain-bandwidth products (>20 GHz) with adjustable 3 dB frequencies.© 1995 American Institute of Physics.

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页码：1367 / 1369

页数：3

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