HIGH-SPEED JUNCTION-DEPLETED GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS

被引：6

作者：

CHEN, CY ^{[1
]}

DENTAI, AG ^{[1
]}

KASPER, BL ^{[1
]}

GARBINSKI, PA ^{[1
]}

机构：

[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 12期

关键词：

D O I：

10.1063/1.95745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1164 / 1166

页数：3

共 7 条

[1] HIGH-SENSITIVITY GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS PREPARED BY VAPOR-PHASE EPITAXY [J].

CHEN, CY ;

KASPER, BL ;

COX, HM .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1142-1144

[2] LOW-NOISE GA0.47IN0.53 AS PHOTOCONDUCTIVE DETECTORS USING FE COMPENSATION [J].

CHEN, CY ;

CHI, GC .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1083-1085

[3] MODULATION-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS PHOTODETECTOR PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHEN, CY ;

PANG, YM ;

CHO, AY ;

ALAVI, K ;

GARBINSKI, PA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :262-264

[4] HIGH-SPEED, ION BOMBARDED INGAAS PHOTOCONDUCTORS [J].

DOWNEY, PM ;

MARTIN, RJ ;

NAHORY, RE ;

LORIMOR, OG .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :396-398

[5]

Hammond R. B., 1981, International Electron Devices Meeting, P157

[6] HIGH-SPEED INP OPTOELECTRONIC SWITCH [J].

LEONBERGER, FJ ;

MOULTON, PF .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :712-714

[7] PICOSECOND PHOTOCONDUCTIVITY IN RADIATION-DAMAGED SILICON-ON-SAPPHIRE FILMS [J].

SMITH, PR ;

AUSTON, DH ;

JOHNSON, AM ;

AUGUSTYNIAK, WM .

APPLIED PHYSICS LETTERS, 1981, 38 (01) :47-50

← 1 →