HIGH-SPEED INP OPTOELECTRONIC SWITCH

The successful fabrication and demonstration of an InP optoelectronic switch is reported. The results obtained suggest that this device may be better suited for high-speed analog signal processing applications than previously reported Si and GaAs switches. In experiments using cw mode-locked lasers, the switches have exhibited an on-state impedance of 45 Ω for 40pJ of incident laser energy and an inherent rise time of 30 psec. In addition, the switches have been used to generate a train of 70-psec-wide pulses at a 900-MHz repetition rate, and to sample a 68.9-MHz sine wave at 275 MS/sec with an accuracy to 0.2 dB (98%) and an on-off ratio of 40 dB.