PICOSECOND OPTOELECTRONIC SWITCHING IN GAAS

被引：179

作者：

LEE, CH ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 02期

关键词：

D O I：

10.1063/1.89297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：84 / 86

页数：3

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共 12 条

[1] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON
AUSTON, DH
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 101 - 103
[2] ELECTRICAL PROPERTIES OF GOLD-DOPED DIFFUSED SILICON COMPUTER DIODES
BAKANOWSKI, AE
FORSTER, JH
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 87 - 104
[3] Bube R.H., 1960, PHOTOCONDUCTIVITY SO
[4] PROPERTIES OF SILICON AND GERMANIUM .2.
CONWELL, EM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300
[5] GRUN JB, 1964, IBM J RES DEV, V8, P141
[6] OBSERVATION OF 2-PHOTON CONDUCTIVITY IN GAAS WITH NANOSECOND AND PICOSECOND LIGHT-PULSES
JAYARAMAN, S
LEE, CH
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (10) : 392 - +
[7] MICROWAVE SWITCHING BY PICOSECOND PHOTOCONDUCTIVITY
JOHNSON, AM
AUSTON, DH
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (06) : 283 - 287
[8] PHOTOCONDUCTIVE DETECTOR OF FAST-TRANSITION OPTICAL WAVEFORMS
LAWTON, RA
SCAVANNEC, A
[J]. ELECTRONICS LETTERS, 1975, 11 (04) : 74 - 75
[9] KILOVOLT PICOSECOND OPTOELECTRONIC SWITCH AND POCKELS CELL
LEFUR, P
AUSTON, DH
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 21 - 23
[10] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS
RIDLEY, BK
WATKINS, TB
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &