FANO FACTOR FACT AND FALLACY

被引：49

作者：

ZULLIGER, HR

AITKEN, DW

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1970年 / NS17卷 / 03期

关键词：

D O I：

10.1109/TNS.1970.4325691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：187 / +

页数：1

共 23 条

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[10] TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD [J].

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