QUANTUM CONDUCTIVITY CORRECTIONS IN FREESTANDING AND SUPPORTED N+-GAAS WIRES

被引：10

作者：

POTTS, A ^{[1
]}

HASKO, DG ^{[1
]}

CLEAVER, JRA ^{[1
]}

SMITH, CG ^{[1
]}

AHMED, H ^{[1
]}

KELLY, MJ ^{[1
]}

FROST, JEF ^{[1
]}

JONES, GAC ^{[1
]}

PEACOCK, DC ^{[1
]}

RITCHIE, DA ^{[1
]}

机构：

[1] GEC HIRST RES LABS, WEMBLEY HA9 7PP, MIDDX, ENGLAND

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1990年 / 2卷 / 07期

关键词：

D O I：

10.1088/0953-8984/2/7/011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Low-temperature electrical and magnetoresistance measurements have been performed on free-standing and supported wires of n-type GaAs doped to 10 17 cm-3 over the temperature range 0.47-4.2 K. These wires were triangular in cross-section, with widths of 600-900 nm and lengths of 3.2-10 mu m. The authors report that the observed increase in the resistance for temperatures below 4.2 K can be interpreted as being due to a combination of weak localisation of 3D electron-electron interaction effects. They also show how the results described here can be used as the basis for a determination of the phonon conductivity and dimensionality in free-standing structures.

引用

页码：1807 / 1815

页数：9