ION MICROPROBE SYSTEM AT WASEDA-UNIVERSITY FOR SEMICONDUCTOR ANALYSIS

被引：20

作者：

OHDOMARI, I ^{[1
]}

SUGIMORI, M ^{[1
]}

KOH, M ^{[1
]}

NORITAKE, K ^{[1
]}

ISHIKAWA, M ^{[1
]}

SHIMIZU, H ^{[1
]}

TANAKA, R ^{[1
]}

KAMIYA, T ^{[1
]}

UTSUNOMIYA, N ^{[1
]}

机构：

[1] JAPAN ATOM ENERGY RES INST,TAKASAKI,GUNMA 37012,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 54卷 / 1-3期

关键词：

D O I：

10.1016/0168-583X(91)95493-W

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In accordance with the recent expansion of ion microprobe applications, many efforts have been devoted to increasing the ion current in order to obtain better statistics. Extremely high current density, however, causes a serious problem because of radiation damage in the sample. In order to reduce the beam effect as much as possible, we have designed and fabricated an annular type SSD for RBS. To investigate the mechanism of radiation induced effects, we have added a SEM column to the target chamber.

引用

页码：71 / 74

页数：4