ION MICROBEAM APPLICATIONS IN SEMICONDUCTORS

被引：25

作者：

WILLIAMS, JS ^{[1
]}

MCCALLUM, JC ^{[1
]}

BROWN, RA ^{[1
]}

机构：

[1] UNIV MELBOURNE,SCH PHYS,PARKVILLE,VIC 3052,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 30卷 / 03期

关键词：

IMAGING TECHNIQUES - LASERS - SEMICONDUCTING GALLIUM ARSENIDE - Microanalysis - SEMICONDUCTING SILICON - Microanalysis;

D O I：

10.1016/0168-583X(88)90045-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Microbeam techniques and applications to semiconductor analysis are briefly reviewed. Special microbeam requirements and limitations for channeling analysis using Mev He microbeams are discussed, including conditions to minimize beam damage to Si and GaAs. Finally, channeling contrast microscopy is described, together with the application of this technique to the analysis of phase transformations and impurity redistribution in locally laser annealed Si.

引用

页码：480 / 485

页数：6

共 10 条

[1]

BROWN RA, 1985, MAT RES SOC S P, V48, P403

[2]

Chu W. K., 1978, BACKSCATTERING SPECT

[3]

FELDMAN LC, 1982, MATERIALS ANAL ION C

[4] TOTAL QUANTITATIVE RECORDING OF ELEMENTAL MAPS AND SPECTRA WITH A SCANNING MICROPROBE [J].