ANODIC ETCHING OF P-TYPE CUBIC SILICON-CARBIDE

被引：8

作者：

HARRIS, GL

FEKADE, K

WONGCHOTIGUL, K

机构：

[1] Materials Science Research Center of Excellence, Department of Electrical Engineering, School of Engineering, Howard University, Washington, DC, 20059, 2300 6th Street, NW

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1992年 / 3卷 / 03期

关键词：

D O I：

10.1007/BF00695513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA cm-2. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm s-1 was obtained in a 1:1:50 HF:HCl:H2O electrolyte.

引用

页码：162 / 163

页数：2

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