A TECHNIQUE FOR DELINEATION OF PN JUNCTIONS IN CUBIC SILICON-CARBIDE

被引：4

作者：

HARRIS, GL

FEKADE, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 02期

关键词：

D O I：

10.1149/1.2095625

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：405 / 407

页数：3

共 7 条

[1]

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[2]

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[3]

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[6] MICROSTRUCTURAL, CHEMICAL, AND ELECTRICAL CHARACTERIZATION OF THE BETA-SILICON CARBIDE THIN-FILM SILICON SUBSTRATE INTERFACE [J].

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APPLIED PHYSICS LETTERS, 1985, 46 (08) :766-768

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