MICROSTRUCTURAL, CHEMICAL, AND ELECTRICAL CHARACTERIZATION OF THE BETA-SILICON CARBIDE THIN-FILM SILICON SUBSTRATE INTERFACE

被引：6

作者：

RYU, J

KIM, HJ

DAVIS, RF

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.96006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：850 / 852

页数：3

共 11 条

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[9] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J].

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[10] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].

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