THERMAL-STRESSES IN HETEROEPITAXIAL BETA SILICON-CARBIDE THIN-FILMS GROWN ON SILICON SUBSTRATES

被引:52
作者
LIAW, HP
DAVIS, RF
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D O I
10.1149/1.2115458
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:3014 / 3018
页数:5
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