PREPARATION AND PROPERTIES OF VAPOR-PHASE EPITAXIAL SILICON-CARBIDE DIODES

被引：11

作者：

GRAMBERG, G

KONIGER, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 03期

关键词：

D O I：

10.1016/0038-1101(72)90083-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：285 / +

页数：1

共 22 条

[1] X-RAY METHOD FOR DETERMINATION OF POLARITY OF SIC CRYSTALS [J].

BRACK, K .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3560-&

[2] SOLUTION GROWN SIC P-N JUNCTIONS [J].

BRANDER, RW ;

SUTTON, RP .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1969, 2 (03) :309-&

[3] ETCHING OF ALPHA-SILICON CARBIDE [J].

BRANDER, RW ;

BOUGHEY, AL .

BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (07) :905-&

[4]

CHOYKE WJ, 1969, MAT RES B, V4, P141

[5] CHEMICAL ETCHING OF SILICON CARBIDE WITH HYDROGEN [J].

CHU, TL ;

CAMPBELL, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) :955-&

[6] TEMPERATURE DEPENDENCE OF SPACE CHARGE CAPACITANCE OF SILICON CARBIDE DIODES [J].

GRAMBERG, G .

SOLID-STATE ELECTRONICS, 1971, 14 (11) :1067-+

[7]

GREEBE CAA, 1963, PHILIPS RES REP S1

[8] GROWTH OF ALPHA-SIC SINGLE CRYSTALS FROM CHROMIUM SOLUTION [J].

GRIFFITHS, LB ;

MLAVSKY, AI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :805-810

[9] ELECTROLESS NICKEL PLATING ON SILICON [J].

IWASA, H ;

YOKOZAWA, M ;

TERAMOTO, I .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) :485-&

[10]

KHOLUYANOV GF, 1969, SOV PHYS SEMICOND+, V3, P560

← 1 2 3 →