TEMPERATURE DEPENDENCE OF SPACE CHARGE CAPACITANCE OF SILICON CARBIDE DIODES

被引：6

作者：

GRAMBERG, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 11期

关键词：

D O I：

10.1016/0038-1101(71)90016-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1067 / +

页数：1

共 10 条

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GRAMBERG G, TO BE PUBLISHED

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