CAPACITANCE-VOLTAGE RELATIONS OF SCHOTTKY AND P-N DIODES IN PRESENCE OF BOTH SHALLOW AND DEEP IMPURITIES

被引：10

作者：

VANOPDORP, C

机构：

[1] Philips Research Laboratories, NV Philips' Gloeilampenfabrieken, Eindhoven

来源：

PHYSICA STATUS SOLIDI | 1969年 / 32卷 / 01期

关键词：

D O I：

10.1002/pssb.19690320110

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

If at the lightly doped side of an abrupt junction both shallow and deep impurities of the same kind are present, the slope of a low‐frequency C−2 vs. V plot is proportional to the total concentration of these impurities. The value of the voltage Ve as found by extrapolating C−2 to zero depends on the individual concentrations and depths of the two kinds of impurities. A simple expression for Ve is derived. The same is done for a diffused graded junction with both shallow and deep impurities in the starting material. If the depths of the impurities are known, the two concentrations can be found separately. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：81 / +

页数：1

共 6 条

[1]

CHANG YF, 1967, SOLID STATE ELECTRON, V10, P281

[2] THE CHARGE AND POTENTIAL DISTRIBUTIONS AT THE ZINC OXIDE ELECTRODE [J].