SOME PROPERTIES OF VAPOR DEPOSITED SIC

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[2] BEAN K, 1963, J ELECTROCHEM SOC, V110, pC265

[3] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &

[4] BRADSHAW WG, 1958, LMSD2466

[5] BROWN ARG, 1960, SILICON CARBIDE REVI

[6] EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 825 - &

[7] CARAS GJ, 1965, RSIC381 REDST SCIENT

[8] DONOVAN RP, 1965, 4 P ANN MICR S, pA4

[9] TEMPERATURE CHARACTERISTICS OF VACUUM DEPOSITED DIELECTRIC FILMS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (12) : 1459 - &

[10] HOLTER MR, 1962, FUNDAMENTALS INFRARE, P148

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[2] BEAN K, 1963, J ELECTROCHEM SOC, V110, pC265

[3] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &

[4] BRADSHAW WG, 1958, LMSD2466

[5] BROWN ARG, 1960, SILICON CARBIDE REVI

[6] EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 825 - &

[7] CARAS GJ, 1965, RSIC381 REDST SCIENT

[8] DONOVAN RP, 1965, 4 P ANN MICR S, pA4

[9] TEMPERATURE CHARACTERISTICS OF VACUUM DEPOSITED DIELECTRIC FILMS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (12) : 1459 - &

[10] HOLTER MR, 1962, FUNDAMENTALS INFRARE, P148