PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES

被引：809

作者：

NISHINO, S

POWELL, JA

WILL, HA

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 05期

关键词：

D O I：

10.1063/1.93970

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：460 / 462

页数：3

共 13 条

[1]

Air Force Cambridge Research Laboratories (U.S.)

[2]

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[4]

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[10] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J].

NISHINO, S ;

HAZUKI, Y ;

MATSUNAMI, H ;

TANAKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2674-2680

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