VAPOR-PHASE DEPOSITION OF BETA-SILICON CARBIDE ON SILICON SUBSTRATES

被引：30

作者：

KUROIWA, K ^{[1
]}

SUGANO, T ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT ELECTR ENGN,BUNKYO,TOKYO 113,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 01期

关键词：

D O I：

10.1149/1.2403387

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：138 / 140

页数：3

相关论文

共 13 条

[1] Bartlett R. W., 1969, MATER RES B, V4, pS341
[2] EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE
CAMPBELL, RB
CHU, TL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 825 - &
[3] JACKSON DM, 1965, T METALL SOC AIME, V233, P468
[4] EPITAXIAL GROWTH OF SILICON CARBIDE
JENNINGS, VJ
SOMMER, A
CHANG, HC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 728 - &
[5] GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICON
KHAN, IH
SUMMERGRAD, RN
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (01) : 12 - +
[6] KNIPPENBERG WF, 1966, PHILIPS RES REP, V21, P113
[7] Knippenberg WF., 1963, PHILIPS RES REP, V18, P161
[8] MARSHALL RC, 1969, MAT RES B, V4, pS73
[9] EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE
NAKASHIMA, H
SUGANO, T
YANAI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (10) : 874 - +
[10] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS
NELSON, WE
HALDEN, FA
ROSENGREEN, A
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +