EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE

[1] [Anonymous], 1951, ATOM MOVEMENTS

[2] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[3] CHANG HC, SILICON CARBIDE, P496

[4] DILLON JA, 1959, SILICON CARBIDE, P245

[5] GROWTH OF ALPHA-SIC SINGLE CRYSTALS FROM CHROMIUM SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 805 - 810

[6] JACKSON DM, 1965, T METALL SOC AIME, V233, P468

[7] ELECTRONIC CONDUCTION IN SILICON CARBIDE [J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (05) : 821 - 827

[8] Lely A, 1955, BER DEUT KERAM GES, V8, P229

[9] OCORNOR JR, P C SIC ED

[10] INFRARED PROPERTIES OF CUBIC SILICON CARBIDE FILMS [J]. PHYSICAL REVIEW, 1959, 113 (01): : 133 - 136

[1] [Anonymous], 1951, ATOM MOVEMENTS

[2] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[3] CHANG HC, SILICON CARBIDE, P496

[4] DILLON JA, 1959, SILICON CARBIDE, P245

[5] GROWTH OF ALPHA-SIC SINGLE CRYSTALS FROM CHROMIUM SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 805 - 810

[6] JACKSON DM, 1965, T METALL SOC AIME, V233, P468

[7] ELECTRONIC CONDUCTION IN SILICON CARBIDE [J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (05) : 821 - 827

[8] Lely A, 1955, BER DEUT KERAM GES, V8, P229

[9] OCORNOR JR, P C SIC ED

[10] INFRARED PROPERTIES OF CUBIC SILICON CARBIDE FILMS [J]. PHYSICAL REVIEW, 1959, 113 (01): : 133 - 136