GROWTH, TEXTURE, AND SURFACE MORPHOLOGY OF SIC LAYERS

[1] BAKER JA, 1968, 14 P NAT S EXH COC B

[2] BEAMAN DR, 1968, PRIVATE COMMUNICATIO

[3] SOME PROPERTIES OF VAPOR DEPOSITED SIC [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (11) : 1158 - &

[4] BLANK JM, 1968, OCT P INT SIC C STAT

[5] BLANK JM, 1969, MATER RES B S, V4

[6] EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 825 - &

[7] CHOUDHURY PR, 1969, J ELECTROCHEM SOC, V116, P1441

[8] DEPOSITION OF SILICON AND SILICON CARBIDE BY FILM-BOILING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1315 - &

[9] DEPOSITION AND MICROSTRUCTURE OF VAPOR-DEPOSITED SILICON CARBIDE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1968, 51 (08) : 424 - &

[10] JACKSON D, 1966, AD635136

[1] BAKER JA, 1968, 14 P NAT S EXH COC B

[2] BEAMAN DR, 1968, PRIVATE COMMUNICATIO

[3] SOME PROPERTIES OF VAPOR DEPOSITED SIC [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (11) : 1158 - &

[4] BLANK JM, 1968, OCT P INT SIC C STAT

[5] BLANK JM, 1969, MATER RES B S, V4

[6] EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 825 - &

[7] CHOUDHURY PR, 1969, J ELECTROCHEM SOC, V116, P1441

[8] DEPOSITION OF SILICON AND SILICON CARBIDE BY FILM-BOILING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) : 1315 - &

[9] DEPOSITION AND MICROSTRUCTURE OF VAPOR-DEPOSITED SILICON CARBIDE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1968, 51 (08) : 424 - &

[10] JACKSON D, 1966, AD635136