SCHOTTKY-BARRIER DIODES ON 3C-SIC

[1] Air Force Cambridge Research Laboratories (U.S.)

[2] University of South Carolina in: Silicon Carbide, 1974, SILICON CARBIDE 1973

[3] EVIDENCE OF SPACE-CHARGE-LIMITED CURRENT IN AMORPHOUS-SILICON SCHOTTKY DIODES [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 200 - 202

[4] SURFACE-BARRIER DIODES ON SILICON CARBIDE [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1458 - &

[5] METAL-SEMICONDUCTOR SURFACE BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &

[6] MEAD CA, 1964, PHYS REV A, V134, P713

[7] MUENCH MV, 1977, P INT ELECTRONIC DEV, P337

[8] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +

[9] POHL RG, 1960, SILICON CARBIDE HIGH, P312

[10] HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 72 - 73

[1] Air Force Cambridge Research Laboratories (U.S.)

[2] University of South Carolina in: Silicon Carbide, 1974, SILICON CARBIDE 1973

[3] EVIDENCE OF SPACE-CHARGE-LIMITED CURRENT IN AMORPHOUS-SILICON SCHOTTKY DIODES [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 200 - 202

[4] SURFACE-BARRIER DIODES ON SILICON CARBIDE [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1458 - &

[5] METAL-SEMICONDUCTOR SURFACE BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &

[6] MEAD CA, 1964, PHYS REV A, V134, P713

[7] MUENCH MV, 1977, P INT ELECTRONIC DEV, P337

[8] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +

[9] POHL RG, 1960, SILICON CARBIDE HIGH, P312

[10] HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 72 - 73