EXPERIMENTAL 3C-SIC MOSFET

被引：62

作者：

KONDO, Y

TAKAHASHI, T

ISHII, K

HAYASHI, Y

SAKUMA, E

MISAWA, S

DAIMON, H

YAMANAKA, M

YOSHIDA, S

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 07期

关键词：

D O I：

10.1109/EDL.1986.26417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：404 / 406

页数：3

共 12 条

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[3]

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[4]

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[5] HETEROEPITAXIAL GROWTH OF BETA-SIC ON SILICON SUBSTRATE USING SICL4-C3H8-H2 SYSTEM [J].

MATSUNAMI, H ;

NISHINO, S ;

TANAKA, T .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :138-143

[6]

MISAWA S, 1985, 46TH AUT M JAP SOC A, P557

[7]

MUNCH WV, 1978, SOLID STATE ELECTRON, V21, P479, DOI 10.1016/0038-1101(78)90283-6

[8]

NISHINO S, 1984, 16TH INT C SOL STAT, P8

[9] HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].

SASAKI, K ;

SAKUMA, E ;

MISAWA, S ;

YOSHIDA, S ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :72-73

[10]

Vodakov Y. A., 1973, SILICON CARBIDE, P508

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