HETEROEPITAXIAL GROWTH OF BETA-SIC ON SILICON SUBSTRATE USING SICL4-C3H8-H2 SYSTEM

被引：30

作者：

MATSUNAMI, H

NISHINO, S

TANAKA, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 45卷 / 01期

关键词：

D O I：

10.1016/0022-0248(78)90425-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：138 / 143

页数：6

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