OPTICAL-PROPERTIES OF BETA-SIC CRYSTALS PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引：13

作者：

NISHINO, S ^{[1
]}

MATSUNAMI, H ^{[1
]}

TANAKA, T ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 11期

关键词：

D O I：

10.1143/JJAP.14.1833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1833 / 1834

页数：2

共 9 条

[1]

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PHYSICAL REVIEW, 1969, 187 (03) :1041-&

[3]

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[4] GROWTH, TEXTURE, AND SURFACE MORPHOLOGY OF SIC LAYERS [J].

JACOBSON, KA .

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[5] VAPOR-PHASE DEPOSITION OF BETA-SILICON CARBIDE ON SILICON SUBSTRATES [J].

KUROIWA, K ;

SUGANO, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :138-140

[6]

Moss T. S., 1973, SEMICONDUCTOR OPTOEL, P19

[7] EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE [J].

NAKASHIMA, H ;

SUGANO, T ;

YANAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (10) :874-+

[8] INFRARED PROPERTIES OF CUBIC SILICON CARBIDE FILMS [J].

SPITZER, WG ;

KLEINMAN, DA ;

FROSCH, CJ .

PHYSICAL REVIEW, 1959, 113 (01) :133-136

[9] CUBIC BETA-SILICON CARBIDE FILMS ON SILICON SUBSTRATES [J].

TOMBS, NC ;

COMER, JJ ;

FITZGERA.JF .

SOLID-STATE ELECTRONICS, 1965, 8 (11) :839-&

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