CUBIC BETA-SILICON CARBIDE FILMS ON SILICON SUBSTRATES

[1] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[2] GROWTH OF ALPHA-SIC SINGLE CRYSTALS FROM CHROMIUM SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 805 - 810

[3] TRIPYRAMID GROWTH OF EPITAXIAL SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 189 - &

[4] ELECTRONIC CONDUCTION IN SILICON CARBIDE [J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (05) : 821 - 827

[5] Lely A, 1955, BER DEUT KERAM GES, V8, P229

[6] STRUCTURE DEFECTS IN PYROLTIC SILICON EPITAXIAL FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2813 - &

[7] OCONNOR JR, 1960, SILICON CARBIDE HIGH

[8] PINSKER ZG, 1953, ELECTRON DIFFRACTION, P108

[9] EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 872 - 873

[10] ON SI-C CONTAMINATION OF SILICON EPITAXIAL WAFER [J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 743 - &

[1] PROPERTIES OF GOLD-DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173

[2] GROWTH OF ALPHA-SIC SINGLE CRYSTALS FROM CHROMIUM SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 805 - 810

[3] TRIPYRAMID GROWTH OF EPITAXIAL SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 189 - &

[4] ELECTRONIC CONDUCTION IN SILICON CARBIDE [J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (05) : 821 - 827

[5] Lely A, 1955, BER DEUT KERAM GES, V8, P229

[6] STRUCTURE DEFECTS IN PYROLTIC SILICON EPITAXIAL FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2813 - &

[7] OCONNOR JR, 1960, SILICON CARBIDE HIGH

[8] PINSKER ZG, 1953, ELECTRON DIFFRACTION, P108

[9] EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 872 - 873

[10] ON SI-C CONTAMINATION OF SILICON EPITAXIAL WAFER [J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 743 - &